Isometric embeddings into Heisenberg groups

We study isometric embeddings of a Euclidean space or a Heisenberg group into a higher dimensional Heisenberg group, where both the source and target space are equipped with an arbitrary left-invariant homogeneous distance that is not necessarily sub-Riemannian. We show that if all infinite geodesics in the target are straight lines, then such an embedding must be a homogeneous homomorphism. We discuss a necessary and certain sufficient conditions for the target space to have this ‘geodesic linearity property’, and we provide various examples.     

Synthesis of Axially Chiral Styrenes through Pd-Catalyzed Asymmetric C−H Olefination Enabled by an Amino Amide Transient Directing Group

The atroposelective synthesis of axially chiral styrenes remains a formidable challenge due to their relatively lower rotational barriers compared to the biaryl atropoisomers. Herein, we describe the construction of axially chiral styrenes through Pd^II-catalyzed atroposelective C−H olefination, using a bulky amino amide as a transient chiral auxiliary. Various axially chiral styrenes were produced with good yields and high enantioselectivity (up to 95 % yield and 99 % ee). Carboxylic acid derivatives of the resulting axially chiral styrenes showed superior enantiocontrol over the biaryl counterparts in Co^III-catalyzed enantioselective C(sp³)−H amidation of thioamide. Mechanistic studies suggest that C−H cleavage is the enantioselectivity-determining step.     

On structure-preserving connections

In this paper we find the formula of connections under which an almost complex structure is covariantly constant. These types of connections on anti-Kähler–Codazzi manifolds are described. Also, twin metric-preserving connections are analyzed for quasi-Kähler manifolds. Finally, anti-Hermitian Chern connections are investigated.     

Repdigits as sums of three Pell numbers

In this paper, all base 10 repdigits expressible as sums of three Pell numbers are found.     

Integral Representations of the Large and Little Schröder Numbers

In the paper, the authors establish several integral representations for the generating functions of the large and little Schröder numbers and for the large and little Schröder numbers.     

Harmonically pump a femtosecond optical parametric oscillator to 1.13 GHz by a femtosecond 515 nm laser

We demonstrate a harmonically pumped femtosecond optical parametric oscillator(OPO)laser using a frequency-doubled mode-locked Yb:KGW laser at a repetition rate of 75.5 MHz as the pump laser.Based on a bismuth borate nonlinear crystal,repetition rates up to 1.13 GHz are realized,which is 15 times that of the pump laser.The signal wavelength is tunable from 700 nm to 887 nm.The maximum power of the signal is 207 m W at the central wavelength of 750 nm and the shortest pulse duration is 117 fs at 780 nm.The beam quality(M^2 factor)in the horizontal and vertical directions of the output beam are 1.077 and 1.141,respectively.     

Peridynamic modeling and simulation of coupled thermomechanical removal of ice from frozen structures

Meccanica - In this work, a bond-based peridynamic de-icing model has been developed to simulate the thermo-mechanical ice removal process of frozen structures. In the proposed numerical method,...     

高压下β-InSe弹性常数、电子结构的第一性原理研究

基于密度泛函理论的第一性原理计算方法,本文研究了高压对β-InSe弹性常数、机械性能和电子结构的影响.在0～20 GPa范围内,随着压力的增大,β-InSe的晶格常数、晶胞体积逐渐减小,结构参数a/a_0、c/c_0、V/V_0单调减小.在0～12 GPa范围内,弹性模量G、E、B和泊松比v随着压力增大而增大,在16 GPa时大幅减小,G、E、B分别减小了34.9%、53.3%、82.9%.随着压力增大,Se-In和In-In原子之间的电荷密度增大,Se-In原子之间的共价键增强,层间距减小.而且,β-InSe在20 GPa时带隙消失,发生了半导体向半金属的相变.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.